| Semiconductor Material | Band Gap Energy ($E_g$) at 300 K |
|---|
| Silicon (Si) | 1.10 eV |
| Germanium (Ge) | 0.67 eV |
| Gallium Arsenide (GaAs) | 1.43 eV |
| Diamond (C) | 5.50 eV |
Using the band gap data above, determine the maximum threshold wavelength of an incident photon required to excite an electron from the valence band to the conduction band in Silicon ($E_g = 1.10\text{ eV}$). ($h = 6.63 \times 10^{-34}\text{ J}\cdot\text{s}$, $c = 3 \times 10^8m/s$, $1\text{ eV} = 1.6 \times 10^{-19}\text{ J}$).